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Preliminary data
IDP30E120 IDB30E120
Product Summary VRRM IF VF Tjmax 1200 30 1.65 150
P-TO220-2-2.
Feature Fast recovery Soft switching
1200 V EmCon
technology
Low reverse recovery charge Low forward voltage Easy paralleling
Type IDP30E120 IDB30E120
Package P-TO220-2-2.
P-TO220-3.SMD Q67040-S4383
Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Repetitive peak reverse voltage Continous forward current
TC=25C TC=90C
Surge non repetitive forward current
TC=25C, tp =10 ms, sine halfwave
Maximum repetitive forward current
TC=25C, tp limited by Tjmax, D=0.5
Power dissipation
TC=25C TC=90C
Operating and storage temperature Soldering temperature
1.6mm(0.063 in.) from case for 10s
Fast Switching EmCon
Diode
V A V C

P-TO220-3.SMD
Ordering Code Q67040-S4390
Marking D30E120 D30E120
Pin 1 C NC
PIN 2 A C
PIN 3 A
Symbol VRRM IF
Value 1200 50 30
Unit V A
IFSM IFRM Ptot
102 76.5 W 138 66
Tj , Tstg TS
-55...+150 260
C C
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Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area 1)
IDP30E120 IDB30E120
Symbol min. RthJC RthJA RthJA -
Values typ. 35 max. 0.9 62 62 -
Unit
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Reverse leakage current
VR =1200V, Tj=25C VR =1200V, Tj=150C
Symbol min. IR VF -
Values typ. max.
Unit
A 1.65 1.7 100 2500 V 2.15 -
Forward voltage drop
IF =30A, Tj=25C IF =30A, Tj=150C
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2
2001-12-12
Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time
VR =800V, IF =30A, diF /dt=850A/s, Tj=25C VR =800V, IF =30A, diF /dt=850A/s, Tj=125C VR =800V, IF =30A, diF /dt=850A/s, Tj=150C
IDP30E120 IDB30E120
Symbol min. trr Irrm Qrr S -
Values typ. max.
Unit
ns 243 355 380 23.7 28.3 29.5 2630 4700 5200 6 7.4 7.5 A nC -
Peak reverse current
VR =800V, IF = 30 A, diF /dt=850A/s, Tj =25C VR =800V, IF =30A, diF/dt=850A/s, Tj =125C VR =800V, IF =30A, diF/dt=850A/s, Tj =150C
Reverse recovery charge
VR =800V, IF =30A, diF /dt=850A/s, Tj=25C VR =800V, IF =30A, diF/dt=850A/s, Tj =125C VR =800V, IF =30A, diF/dt=850A/s, Tj =150C
Reverse recovery softness factor
VR =800V, IF =30A, diF /dt=850A/s, Tj=25C VR =800V, IF =30A, diF /dt=850A/s, Tj=125C VR =800V, IF =30A, diF /dt=850A/s, Tj=150C
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Preliminary data 1 Power dissipation Ptot = f (TC )
140
IDP30E120 IDB30E120
2 Diode forward current IF = f(TC )
55
parameter: Tj
W
150C
parameter: Tj 150C
A
45 40
120 110 100
Ptot
80 70 60 50 40 30 20 10 0 25 50 75 100
IF C TC
90
35 30 25 20 15 10 5
150
0 25
50
75
100
C TC
150
3 Typ. diode forward current IF = f (VF )
90
4 Typ. diode forward voltage VF = f (Tj )
2.4
60A
A V
70 60 50 1.8 40 30 20 1.4 10 0 0 1.2 -60 1.6
VF
IF
-55C 25C 100C 150C
2
30A
15A
0.5
1
1.5
2
V VF
3
-20
20
60
100
C 160 Tj
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Preliminary data 5 Typ. reverse recovery time trr = f (diF /dt) parameter: VR = 800V, Tj = 125C
1100
IDP30E120 IDB30E120
6 Typ. reverse recovery charge Qrr =f(diF /dt) parameter: VR = 800V, Tj = 125 C
6500
ns
nC
60A
900 800
5500
60A 30A 15A
Qrr
trr
5000
30A
700 4500 600 4000 500 400 300 200 200 3500
15A
3000
300
400
500
600
700
800
A/s 1000 diF /dt
2500 200
300
400
500
600
700
800
A/s 1000 diF /dt
7 Typ. reverse recovery current Irr = f (diF/dt) parameter: VR = 800V, Tj = 125C
35
8 Typ. reverse recovery softness factor S = f(800) parameter: VR = 800V, Tj = 125C
18
A
60A 30A 15A
14
Irr
25
12 20 10 15 8 10
60A 30A 15A
S
6 5 200
300
400
500
600
700
800
A/s 1000 diF /dt
4 200
300
400
500
600
700
800
A/s 1000 diF /dt
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2001-12-12
Preliminary data 9 Transient thermal impedance ZthJC = f (tp ) parameter : D = tp /T
10 1
IDP30E120
IDP30E120 IDB30E120
K/W
10 0
Z thJC
10 -1
D = 0.50 10
-2
0.20 0.10 0.05 0.02 0.01 single pulse
10 -3
10 -4 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
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2001-12-12
Preliminary data
TO-220-2-2
A P
symbol [mm] min A 9.70 15.30 0.65 3.55 2.60 9.00 13.00 17.20 4.40 0.40 B C D E max 10.10 15.90 0.85 3.85 3.00 9.40 14.00 17.80 4.80 0.60 min 0.3819 0.6024 0.0256 0.1398 0.1024 0.3543 0.5118 0.6772 0.1732 0.0157
IDP30E120 IDB30E120
N
dimensions [inch] max 0.3976 0.6260 0.0335 0.1516 0.1181 0.3701 0.5512 0.7008 0.1890 0.0236
D U H B V
E
F W J G
F G H J K L M N P T U V W
1.05 typ. 2.54 typ. 4.4 typ. 1.10 1.40 2.4 typ. 6.6 typ. 13.0 typ. 7.5 typ. 0.00 0.40
0.41 typ. 0.1 typ. 0.173 typ. 0.0433 0.0551 0.095 typ. 0.26 typ. 0.51 typ. 0.295 typ. 0.0000 0.0157
X L
C
M
T K
X
Page 7
2001-12-12
Preliminary data
IDP30E120 IDB30E120
TO-220-3-45 (P-TO220SMD)
dimensions
symbol min A B C D E F G H K L M N P Q R S T U V W X Y Z
[mm] max min 9.80 10.00 1.3 typ. 1.25 1.75 0.95 1.15 2.54 typ. 0.72 0.85 5.08 typ. 4.30 1.28 9.00 4.50 1.40 9.40
[inch] max 0.3858 0.3937 0.0512 typ. 0.0492 0.0689 0.0374 0.0453 0.1 typ. 0.0283 0.0335 0.2 typ. 0.1693 0.0504 0.3543 0.1772 0.0551 0.3701
2.30 2.50 14.1 typ. 0.00 0.20 3.30 3.90 8 max 1.70 2.50 0.50 0.65 10.8 typ. 1.35 typ. 6.43 typ. 4.60 typ. 9.40 typ. 16.15 typ.
0.0906 0.0984 0.5551 typ. 0.0000 0.0079 0.1299 0.1535 8 max 0.0669 0.0984 0.0197 0.0256 0.4252 typ. 0.0532 typ. 0.2532 typ. 0.1811 typ. 0.3701 typ. 0.6358 typ.
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Preliminary data
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved.
IDP30E120 IDB30E120
Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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2001-12-12

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